Semiconductor device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKyooho JUNG, Sangyeol KANG, Kyuho CHO, Eunsun KIM, Hyosik MUN
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Abstract
A method of manufacturing a semiconductor device includes forming a first electrode, forming a preliminary dielectric layer on the first electrode, forming a second electrode on the preliminary dielectric layer, and at least partially phase-changing the preliminary dielectric layer to form a dielectric layer. An interfacial energy between the first electrode and the dielectric layer may be less than an interfacial energy between the first electrode and the preliminary dielectric layer.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a first electrode;
- forming a preliminary dielectric layer on the first electrode;
- forming a second electrode on the preliminary dielectric layer;
- and
- at least partially phase-changing the preliminary dielectric layer to form a dielectric layer, an interfacial energy between the first electrode and the dielectric layer being less than an interfacial energy between the first electrode and the preliminary dielectric layer.
A semiconductor device, comprising:
- a first electrode;
- a second electrode on the first electrode;
- and
- a dielectric layer between the first electrode and the second electrode, the dielectric layer including a first portion adjacent to the first electrode, and a second portion adjacent to the second electrode, the first portion and the second portion having different crystalline phases from each other.
Dependencies are inferred from the claim text.