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US 2020/0006320 A1Published application
Electronic circuit with electrostatic discharge protection
AssigneeSTMicroelectronics S.r.l.
InventorsThomas BEDECARRATS, Louise DE CONTI, Philippe GALY
Life of this patent
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Abstract
A semiconductor substrate includes a doped region having an upper surface. The doped region may comprise a conduction terminal of a diode (such as cathode) or a transistor (such as a drain). A silicide layer is provided at the doped region. The silicide layer has an area that only partially covers an area of the upper surface of the doped region. The partial area coverage facilitates modulating the threshold voltage and/or leakage current of an integrated circuit device.
Claims16
An integrated circuit device, comprising:
- a semiconductor substrate including a doped region having an upper surface;
- and
- a silicide layer having an area that only partially covers an area of the upper surface of the doped region.
Dependencies are inferred from the claim text.