US 2020/0002836 A1 · SAMPLE ROD GROWTH AND RESISTIVITY MEASUREMENT DURING SINGLE CRYSTAL SILICON INGOT PRODUCTION

Abstract

Methods for forming single crystal silicon ingots with improved resistivity control. The methods involve growth and resistivity measurement of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The resistivity of the sample rod may be measured directly by contacting a resistivity probe with a planar segment formed on the sample rod. The sample rod may be annealed in a thermal donor kill cycle prior to measuring the resistivity.

Claims19

Dependent claims

A method for producing a single crystal silicon ingot from a silicon melt held within a crucible comprising:

adding polycrystalline silicon to the crucible;
heating the polycrystalline silicon to cause a silicon melt to form in the crucible;
pulling a sample rod from the melt, the sample rod having a diameter;
annealing the sample rod to annihilate thermal donors;
measuring a resistivity of the sample rod after annihilation of thermal donors;
and
pulling a product ingot from the melt, the product ingot having a diameter, the diameter of the sample rod being less than the diameter of the product ingot.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/020,698Filed 27 Jun 2018

Published

2 Jan 2020

Term ends

Not estimatedThe source records don’t support an estimate.

Classification4 codes

C30B 15/20
Single-crystal growth by pulling from a melt, e.g. Czochralski method: controlling or regulating
C30B 29/06
Elements: silicon
C30B 15/14
Single-crystal growth by pulling from a melt, e.g. Czochralski method: heating of the melt or the crystallised materials
C30B
Single-crystal growth

Sample rod growth and resistivity measurement during single crystal silicon ingot production

Life of this patent

Sample rod growth and resistivity measurement during single crystal silicon ingot production

Life of this patent

Abstract

Claims19