Semiconductor device, and method for manufacturing the same

A method of manufacturing a semiconductor device, the method comprising:

• providing a substrate having first, second, third regions divided in a third direction;
• doping a first impurity into the first region;
• doping a second impurity into the second region disposed on the first region;
• doping the first impurity into the third region disposed on the second region;
• patterning the substrate into which the first and second impurities are doped to form a plurality of unit cells, wherein each unit cell has the first region as a drain region, the second region as a body region, and the third region as a source region;
• forming a bit line that extends in a first direction and is connected to the drain region;
• and
• forming a word line that extends in a second direction and is connected to the source region, the second direction being different from the first direction,
• wherein the drain region, the body region, and the source region together define a pillar extending in the third direction that is perpendicular to the first and second directions.

A method of manufacturing a semiconductor device, the method comprising:

• providing a substrate;
• forming a first region on the substrate, the first region including a first material;
• forming a second region on the drain region, the second region including the first material and a second material that are alternately stacked one or more times;
• forming a third region on the body region, the third region including the first material;
• patterning the first to third regions and the substrate to form a plurality of unit cells, wherein each unit cell has the first region as a drain region, the second region as a body region, and the third region as a source region;
• forming a bit line that extends in a first direction and is connected to the drain region;
• and
• forming a word line that extends in a second direction and is connected to the source region, the second direction being different from the first direction,
• wherein the drain region, the body region, and the source region are stacked in a third direction, and define a pillar extending in the third direction that is perpendicular to the first and second directions.