Microelectronic devices and related methods

A method of forming a microelectronic device, the method comprising:

• forming at least one memory block overlying sub-array circuitry;
• forming stair step structures at longitudinal ends of the at least one memory block;
• forming an array of memory cell pillars between the stair step structures;
• and
• forming conductive vias within the at least one memory block, at least some of the conductive vias being formed between the array of memory cell pillars and the stair step structures, wherein the conductive vias operatively couple the at least one memory block to the sub-array circuitry underlying the conductive vias.

A method of forming a microelectronic device, the method comprising:

• forming an array of memory cell pillars within a stack comprising alternating dielectric materials and conductive materials;
• forming conductive vias adjacent the array of memory cell pillars, the conductive vias formed adjacent sub-array circuitry underlying the stack;
• and
• forming stair step structures using multiple chop masks at multiple vertical levels of the alternating dielectric materials and conductive materials of the stack.