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US 2019/0355609 A1Published application
High temperature electrostatic chucking with dielectric constant engineered in-situ charge trap materials
AssigneeApplied Materials, Inc.
InventorsPrashant KULSHRESHTHA, Kwangduk Douglas LEE, Bok Hoen KIM, Zheng John YE, Swayambhu Prasad BEHERA, Ganesh BALASUBRAMANIAN, Juan Carlos ROCHA-ALVAREZ, Jian J. CHEN
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Abstract
Techniques are disclosed for methods and apparatuses for increasing the breakdown voltage while substantially reducing the voltage leakage of an electrostatic chuck at temperatures exceeding about 300 degrees Celsius in a processing chamber.
Claims20
A method for processing a substrate comprising:
- depositing a silicon-based material on a substrate positioned on a substrate support assembly in a vacuum chamber;
- removing the substrate from the vacuum chamber;
- and
- depositing about 100 Å to 3000 Å of a silicon and carbon containing material on the substrate support assembly, the silicon and carbon containing material having a carbon content of less than about 5% by weight.
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A method for processing a substrate in a vacuum processing chamber, the method comprising:
- pre-chucking the substrate while on a substrate support assembly, wherein pre-chucking comprises exposing the substrate to a stabilized pressure and flow of a helium gas in the vacuum processing chamber;
- chucking the substrate to the substrate support assembly;
- depositing a layer of material on the substrate;
- dechucking the substrate;
- and
- removing the substrate from the vacuum processing chamber.
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Dependencies are inferred from the claim text.