High voltage capacitor and method

An electrical component including a high voltage capacitor, comprising:

• a semiconductor material of a first conductivity type;
• a first dopant region extending into a first portion of the semiconductor material;
• a second dopant region extending into a second portion of the semiconductor material and in contact with the first dopant region;
• a first electrically conductive structure over the first dopant region;
• a second electrically conductive structure over a first portion of the second dopant region;
• a first layer of dielectric material over the first electrically conductive structure and the second electrically conductive structure;
• and
• a third electrically conductive structure over a first portion of the first layer of dielectric material, wherein a first portion of the third electrically conductive structure is over the first electrically conductive structure and the first dopant region and a second portion of the third electrically conductive structure is over the second electrically conductive structure and a portion of the second dopant region.

An electrical component including a high voltage capacitor, comprising:

• a semiconductor material of a first conductivity type having a major surface;
• a first dopant region of a second conductivity type in a first portion of the semiconductor material;
• a second dopant region of the second conductivity type in a first portion of the first dopant region of the second conductivity type;
• a third dopant region of the second conductivity type in a second portion of the first dopant region of the second conductivity type, wherein the second dopant region of the second conductivity type is laterally bounded by the third dopant region of the second conductivity type;
• a fourth dopant region of the first conductivity type in the third dopant region of the second conductivity type, wherein the fourth dopant region of the first conductivity type abuts the second dopant region of the second conductivity type, and wherein a first p-n junction is formed between the fourth dopant region of the first conductivity type and the second dopant region of the second conductivity type and a second p-n junction is formed between the fourth dopant region of the first conductivity type and the third dopant region of the second conductivity type;
• a first layer of dielectric material over the semiconductor material;
• a first electrically conductive structure over a first portion of the first layer of dielectric material;
• a second layer of dielectric material over the first electrically conductive structure;
• and
• a first electrical conductor over a first portion of the second layer of dielectric material, the first electrical conductor having a first portion and a second portion, the first portion of the first electrical conductor electrically coupled to a first portion of the first electrically conductive structure and the second portion of the first electrical conductor electrically coupled to a first portion of the first dopant region.