Semiconductor device and method for manufacturing same
AssigneeToshiba Memory Corporation
InventorYoshinori TOKUDA
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Abstract
According to one embodiment, a semiconductor device includes a stacked body, a semiconductor body, and a charge storage portion. The stacked body includes a plurality of electrode layers stacked with an insulator interposed. The semiconductor body extends through the stacked body in a stacking direction of the stacked body. The charge storage portion is provided between the semiconductor body and each of the electrode layers. At least one of the electrode layers is a tungsten film or a molybdenum film including a portion having different fluorine concentration along the stacking direction.
Claims20
A semiconductor device, comprising:
- a stacked body including a plurality of electrode layers stacked with an insulator interposed;
- a semiconductor body extending through the stacked body in a stacking direction of the stacked body;
- and
- a charge storage portion provided between the semiconductor body and each of the electrode layers,
- at least one of the electrode layers being a tungsten film or a molybdenum film including a portion having different fluorine concentration along the stacking direction.
A method for manufacturing a semiconductor device, comprising:
- forming a stacked body including a plurality of first layers and a plurality of second layers, the first layers and the second layers including a first layer and a second layer stacked alternately;
- forming a columnar portion inside a hole piercing the stacked body, the columnar portion including a semiconductor body extending in a stacking direction of the stacked body;
- forming an air gap between the second layers after the forming of the columnar portion by removing the first layers by etching through a slit, the slit piercing the stacked body and dividing the stacked body into a plurality of blocks;
- forming a first metal film along an inner wall of the air gap;
- and
- forming a second metal film on an inner side of the first metal film inside the air gap,
- tungsten films being formed as the first metal film and the second metal film by CVD or ALD using a gas including tungsten fluoride, or molybdenum films being formed as the first metal film and the second metal film by CVD or ALD using a gas including molybdenum fluoride,
- a fluorine concentration in the first metal film and a fluorine concentration in the second metal film being different.
A method for manufacturing a semiconductor device, comprising:
- forming a stacked body including a plurality of first layers and a plurality of second layers, the first layers and the second layers including a first layer and a second layer stacked alternately;
- forming a columnar portion inside a hole piercing the stacked body, the columnar portion including a semiconductor body extending in a stacking direction of the stacked body;
- forming an air gap between the second layers after the forming of the columnar portion by removing the first layers by etching through a slit, the slit piercing the stacked body and dividing the stacked body into a plurality of blocks;
- forming a first metal film along an inner wall of the air gap;
- and
- forming a second metal film on an inner side of the first metal film inside the air gap,
- a tungsten film or a molybdenum film being formed by CVD or ALD as the first metal film and the second metal film,
- a temperature when forming the first metal film and a temperature when forming the second metal film being set to be different.
Dependencies are inferred from the claim text.