Integrated Circuit Comprising an Antifuse Structure and Method of Realizing

A method for manufacturing an integrated circuit comprising a plurality of antifuse structures, the method comprising:

• forming an insulating intermediate region over a substrate;
• forming, within a metallization level over the insulating intermediate region, a plurality of metal intermediate structures, each metal intermediate structure comprising a respective body and a respective beam held at two different points by two respective arms;
• freeing the plurality of metal intermediate structures by removing part of the insulating intermediate region to allow each respective beam to come into contact with each respective body via respective insulating zones, the insulating zones resulting from oxidation of the plurality of metal intermediate structures during the freeing, the insulating zones configured to undergo breakdown in the presence of a breakdown potential difference between the respective body and the respective beam;
• and
• coating the plurality of antifuse structures with an insulating material.

A method for manufacturing an antifuse structure, the method comprising:

• forming a first metallization layer over a substrate;
• forming a first insulating intermediate region over the first metallization layer;
• forming a second metallization layer over the first insulating intermediate region, the second metallization layer comprising a metal intermediate structure that comprises a body and a beam held at two different points by two arms;
• removing at least a portion of the first insulating intermediate region so that the body and the beam make contact via an antifuse insulating zone to form the antifuse structure, the antifuse insulating zone configured to undergo breakdown in the presence of a breakdown potential difference between the body and the beam;
• and
• forming a second insulating intermediate region over the antifuse structure.