Method of making a tantalum sputtering target with increased deposition rate
AssigneeTosoh SMD, Inc.
InventorsMatt Fisher, Alex Kuhn
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Abstract
Methods of making Ta, Nb, and Ta/Nb sputter targets and targets produced thereby. The improved targets comprise a mixed {100}/{111} texture wherein the % volume of {100} texture is increased over prior art methods and a % volume {111} texture reduced compared to targets made by prior art methods. This results in increased film deposition rates upon sputtering of the improved targets. The methods for manufacturing the improved targets comprise a clock rolling step wherein less than 8% target reduction is achieved at rolling speeds of between about 30-40 rpm.
Claims13
A method of making a BCC metal or BCC metal alloy target, said method comprising the following steps:
- a) providing a grain refined billet, with an average grain size of 250 μm or less
- b) cutting a section of this billet to yield enough material for one target blank, and upset forging said blank with a height reduction of at least 50%
- c) clock rolling said target blank with a rolling reduction of less than 8% and a rolling speed between 30 and 40 rpm;
- and
- d) vacuum annealing said target blank within a temperature range of 850° C. to 1000° C.
A sputter target composed of BCC metal or alloy, said target having an average grain size of 250 μm or less, said target having a texture of oriented grain volume fraction of {100} greater than 0.300 wherein 1.00 equals 100% total grain volume.
Dependencies are inferred from the claim text.