Chemical Mechanical Planarization (CMP) Composition and Methods Therefore for Copper and Through Silica Via (TSV) Applications

A method of chemical mechanical polishing a semiconductor substrate having at least one surface comprising copper (Cu) or copper-containing material and at least one second material;

• comprising steps of:
• 1) providing the semiconductor substrate;
• 2) providing a pulish pad;
• 3) providing a Cu chemical mechanical polishing composition comprising
• a) 0.0025 wt. % to 25 wt. % abrasive selected from the group consisting of colloidal silica or high purity colloidal silica;
• the colloidal silica particles doped by other metal oxide within lattice of the colloidal silica;
• colloidal aluminum oxide including alpha-, beta-, and gamma-types of aluminum oxides;
• colloidal and photoactive titanium dioxide;
• cerium oxide;
• colloidal cerium oxide;
• nano-sized inorganic metal oxide particles;
• nano-sized diamond particles;
• nano-sized silicon nitride particles;
• mono-modal, bi-modal, multi-modal colloidal abrasive particles;
• organic polymer-based soft abrasive;
• surface-coated or modified abrasive;
• composite particles;
• and combinations thereof;
• b) 0.1 wt. % to 18.0 wt. % tris chelators selected from the group consisting of amino acid, amino acid derivative, organic amine, and combinations thereof;
• wherein at least one chelator is an amino acid or an amino acid derivative;
• c) 0.005 wt. % to 0.5 wt. % corrosion inhibitor;
• d) 0.0005 wt. % to 0.25 wt. % organic quaternary ammonium salt which is a choline salt formed between choline and other anionic counter ions;
• e) 0.1 wt. % to 10 wt. % oxidizing agent;
• f) 0.0001 wt. % to 0.05 wt. % biocide;
• g) 0 wt. % to 1 wt. % pH adjusting agent;
• and
• h) water;
• the composition has a pH from 3.0 to 12.0;
• wherein
• the amino acid or the amino acid derivative is selected from the group consisting of glycine, D-alanine, L-alanine, DL-alanine, beta-alanine, valine, leucine, isolueciene, phenylamine, proline, serine, threonine, tyrosine, glutamine, asparanine, glutamic acid, aspartic acid, tryptophan, histidine, arginine, lysine, methionine, cysteine, iminodiacetic acid, and combinations thereof;
• and
• the organic amine has a general molecular structure selected from the group consisting of:
• wherein n is from 2 to 12;
• wherein Rn represents an organic alkyl group with n carbon atoms, n is from 1 to 12 and m is from 2 to 12;
• wherein Rn and Rm can be the same or different alkyl groups with n carbon atoms and m carbon atoms respectively, n and m are numbered independently from 1 to 12, and p is from 2 to 12;
• wherein Rn and Rm can be the same or different alkyl groups with n carbon atoms and m carbon atoms respectively, n and m are numbered independently from 1 to 12, and a is from 2 to 12;
• wherein n is from 1 to 12;
• wherein n and m is numbered independently from 1 to 12;
• and combinations thereof;
• 4) contacting the at least one surface with the polish pad and the Cu chemical mechanical polishing composition;
• and
• 5) polishing the at least one surface to remove copper or copper-containing material;
• wherein at least a portion of the at least one surface comprising copper (Cu) or copper-containing material and at least one second material is in contact with both the polishing pad and the Cu chemical mechanical polishing composition.

A system for chemical mechanical polishing a semiconductor substrate having at least one surface comprising copper (Cu) or copper-containing material and at least one second material;

• comprising steps of:
• 1) providing the semiconductor substrate;
• 2) providing a polish pad;
• 3) providing a Cu chemical mechanical polishing composition comprising
• a) 0.0025 wt. % to 25 wt. % abrasive selected from the group consisting of colloidal silica or high purity colloidal silica;
• the colloidal silica particles doped by other metal oxide within lattice of the colloidal silica;
• colloidal aluminum oxide including alpha-, beta-, and gamma-types of aluminum oxides;
• colloidal and photoactive titanium dioxide;
• cerium oxide;
• colloidal cerium oxide;
• nano-sized inorganic metal oxide particles;
• nano-sized diamond particles;
• nano-sized silicon nitride particles;
• mono-modal, bi-modal, multi-modal colloidal abrasive particles;
• organic polymer-based soft abrasive;
• surface-coated or modified abrasive;
• composite particles;
• and combinations thereof;
• b) 0.1 wt. % to 18.0 wt. % tris chelators selected from the group consisting of amino acid, amino acid derivative, organic amine, and combinations thereof;
• wherein at least one chelator is an amino acid or an amino acid derivative;
• c) 0.005 wt. % to 0.5 wt. % corrosion inhibitor;
• d) 0.0005 wt. % to 0.25 wt. % organic quaternary ammonium salt which is a choline salt formed between choline and other anionic counter ions;
• e) 0.1 wt. % to 10 wt. % oxidizing agent;
• f) 0.0001 wt. % to 0.05 wt % biocide;
• g) 0 wt. % to 1 wt. % pH adjusting agent;
• and
• h) water;
• the composition has a pH from 3.0 to 12.0;
• wherein
• the amino acid or the amino acid derivative is selected from the group consisting of glycine, D-alanine, L-alanine, DL-alanine, beta-alanine, valine, leucine, isolueciene, phenylamine, proline, serine, threonine, tyrosine, glutamine, asparanine, glutamic acid, aspartic acid, tryptophan, histidine, arginine, lysine, methionine, cysteine, iminodiacetic acid, and combinations thereof;
• and
• the organic amine has a general molecular structure selected from the group consisting of:
• wherein n is from 2 to 12;
• wherein Rn represents an organic alkyl group with n carbon atoms, n is from 1 to 12 and m is from 2 to 12;
• wherein Rn and Rm can be the same or different alkyl groups with n carbon atoms and m carbon atoms respectively, n and m are numbered independently from 1 to 12, and p is from 2 to 12;
• wherein Rn and Rm can be the same or different alkyl groups with n carbon atoms and m carbon atoms respectively, n and m are numbered independently from 1 to 12, and a is from 2 to 12;
• wherein n is from 1 to 12;
• wherein n and m is numbered independently from 1 to 12;
• and combinations thereof;
• wherein at least a portion of the at least one surface comprising copper (Cu) or copper-containing material and at least one second material is in contact with both the polishing pad and the Cu chemical mechanical polishing composition.