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US 2018/0323203 A1Published application
Multiple-bit electrical fuses
AssigneeInternational Business Machines Corporation
InventorsKANGGUO CHENG, RAMACHANDRA DIVAKARUNI
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Abstract
A method for forming a semiconductor device includes forming a nanosheet stack comprising alternating layers of a first material and a second material on a substrate. The method further includes removing portions of the stack to form tapered stack sidewalls, which have a taper angle in relation to a horizontal surface of the substrate. The method further includes converting the second material to a resistive material. The layers that include the resistive material form one or more electrical fuses.
Claims20
A semiconductor device comprising:
- a nanosheet stack comprising tapered sidewalls formed on a substrate, the nanosheet structure further comprising a first electrical fuse vertically stacked on a second electrical fuse, wherein a length of the first electrical fuse is less than a length of the second electrical fuse to define a multiple-bit fuse;
- a common anode and cathode shared by the first and second electrical fuses;
- a dielectric material isolating the first and second electrical fuses;
- and
- a pair of conductor contacts electrically connected to the anode and cathode.
2 more elements
Dependencies are inferred from the claim text.