Method For Adjusting A Projection Objective

A method for adjusting a projection exposure machine used for microlithography comprising an illumination device for providing illumination and a projection objective comprising a plurality of optical elements for projecting an image of a reticle onto a substrate at an image plane, said method comprising:

• specifying a field maximum value for a parameter indicative of the performance of the projection exposure machine, the parameter being a lithographic process parameter or an image-forming parameter of the projection objective;
• determining initial values for the parameter at each of a plurality of different points in a field at the image plane, wherein an absolute value of the initial value for at least one of the field points exceeds the specified field maximum value;
• and
• adjusting the reticle and/or at least one of the optical elements of the projection objective such that the largest absolute value for every one of the different points in the field is less than the specified field maximum value.

A method for adjusting a projection objective used for microlithography comprising a plurality of optical elements for projecting an image of a reticle onto a substrate at an image plane, said method comprising:

• specifying a field maximum value for a parameter indicative of the performance of the projection objective, the parameter being a lithographic process parameter or an image-forming parameter of the projection objective;
• determining initial values for the parameter at each of a plurality of different points in a field at the image plane, wherein an absolute value of the initial value for at least one of the field points exceeds the specified field maximum value;
• and
• adjusting at least one of the optical elements of the projection objective such that the largest absolute value for every one of the different points in the field is less than the specified field maximum value.