Semiconductor arrangement and formation thereof

A method of forming a semiconductor arrangement, comprising:

• forming a first composite, comprising:
• defining a first dielectric structure and a second dielectric structure overlying a substrate,
• forming a first material layer between the first dielectric structure and the second dielectric structure;
• forming a first dielectric layer over the first material layer;
• etching the first dielectric layer to define a first plug opening;
• forming a second material layer in the first plug opening;
• and
• forming a second dielectric layer over the second material layer;
• and
• attaching the first composite to a second composite such that the second dielectric layer faces the second composite.

A method of forming a semiconductor arrangement, comprising:

• forming a first composite comprising:
• forming a first plug in contact with a first substrate, the first plug in a first dielectric layer and disposed along a first plug axis;
• and
• forming a second dielectric layer over the first plug and the first dielectric layer;
• placing the first composite over a second composite such that the first dielectric layer and second dielectric layer are between the first substrate and the second composite, wherein:
• the second composite comprises a second substrate and a first metal layer, and
• the first plug axis intersects the first metal layer;
• forming a via opening through the first substrate, the first plug, and the second dielectric layer such that the via opening exposes at least some of the first metal layer;
• and
• forming a conductive material in the via opening.