Dummy pattern arrangement and method of arranging dummy patterns
AssigneeUnited Microelectronics Corp.
InventorsChing-Yu Chang, Ying-Chiao Wang, Hon-Huei Liu, Jyh-Shyang Jenq, Chung-Liang Chu, Yu-Ruei Chen
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Abstract
A dummy pattern arrangement and a method of arranging dummy patterns are provided in the present invention. The dummy pattern arrangement includes a substrate with a dummy region, a plurality of first base dummy cells arranged spaced apart from each other along a first direction in the dummy region, and two first edge dummy cells arranged respectively at two opposite sides of the first base dummy cells along the first direction in the dummy region.
Claims14
A dummy pattern arrangement in a semiconductor device, comprising:
- a substrate with a dummy region;
- a plurality of first base dummy cells arranged along a first direction in said dummy region;
- and
- two first edge dummy cells arranged respectively at two opposite sides of said plurality of first base dummy cells along said first direction in said dummy region and are fixed dummy cells between and adjacent to said plurality of first base dummy cells and circuit regions, wherein each said first base dummy cell and said first edge dummy cell comprises a plurality of line patterns spaced apart from each other along said first direction and extending in a second direction which is perpendicular to said first direction, and the width of said line patterns along said first direction in said first base dummy cell is smaller than the width of said line patterns in said first edge dummy cell.
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A method of arranging dummy patterns in semiconductor devices, comprising the steps of:
- defining a dummy region on a substrate;
- dividing said dummy region into multiple row regions;
- defining two first edge dummy cells respectively at two opposite edges of each said row region;
- and
- defining a first base dummy cell and a row of said first base dummy cells between said two first edge dummy cells in each said row region, wherein the number of said first base dummy cells in each said row region is a maximum possible number of said first base dummy cells which may fill up the space between said two first edge dummy cells in each said row region.
Dependencies are inferred from the claim text.