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US 2017/0288058 A1Published application
Electrostatic discharge device
AssigneeTexas Instruments Incorporated
InventorsAravind C. Appaswamy, Akram A. Salman, Farzan Farbiz, Gianluca Boselli
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Abstract
A semiconductor device includes a body and a transistor fabricated into the body. Isolation material at least partially encases the body. Biasing is coupled to the isolation material, wherein the biasing is for changing the electric potential of the isolation material in response to an electrostatic discharge event.
Claims19
A device, comprising:
- a substrate having a top surface;
- an n-type region extending from the top surface;
- a p-type region within the n-type region and extending from the top surface;
- a first n+ region within the p-type region and separated from the n-type region by the p-type region;
- a second n+ region within the p-type region and separated from the n-type region and the first n+ region by the p-type region;
- and
- an impedance above the top surface, and coupled between the n-type region and the second n+ region.
4 more elements
A device, comprising:
- a substrate having a top surface;
- an n-type region extending from the top surface;
- a p-type region within the n-type region and extending from the top surface;
- a first n+ region within the p-type region and separated from the n-type region by the p-type region;
- a second n+ region within the p-type region and separated from the n-type region and the first n+ region by the p-type region;
- and
- a resistor above the top surface, and coupled between the n-type region and the second n+ region.
4 more elements
A device, comprising:
- a substrate having a top surface;
- an n-type region extending from the top surface;
- a p-type region within the n-type region and extending from the top surface;
- a first n+ region within the p-type region and separated from the n-type region by the p-type region;
- a second n+ region within the p-type region and separated from the n-type region and the first n+ region by the p-type region;
- and
- a p-well within the n-type region and outside the p-type region, the p-well extending from the top surface.
4 more elements
Dependencies are inferred from the claim text.