Vertical power component
AssigneeSTMicroelectronics (Tours) SAS
InventorSamuel Menard
Life of this patent
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Abstract
A vertical power component includes a doped silicon substrate of a first conductivity type. A local well of a second conductivity type extends from an upper surface of the substrate. A passivation structure coats a peripheral region of the upper surface side of the substrate surrounding the well. This passivation structure includes, on top of and in contact with the peripheral substrate region, a first region made of a first passivation material and a second region made of a second passivation material. The second region generates, in a surface region of the substrate in contact with said second region, a local increase of the concentration of majority carriers in the substrate.
Claims16
A vertical power component, comprising:
- a doped silicon substrate of a first conductivity type;
- a local well of a second conductivity type extending from an upper surface of the substrate;
- and
- on the upper surface of the substrate, a passivation structure coating a peripheral region of the substrate surrounding the well, said passivation structure comprising, on top of and in contact with said peripheral substrate region, a first region made of a first passivation material and a second region made of a second passivation material, the second region providing, in a surface region of the substrate in contact with said second region, a local increase of concentration of majority carriers in the substrate.
A method of manufacturing a vertical power component inside and on top of a doped silicon substrate of a first conductivity type, comprising the steps of:
- forming a local well of a second conductivity type extending from an upper surface of the substrate;
- and
- forming, on the upper surface side of the substrate, a passivation structure coating a peripheral region of the substrate surrounding the well, said passivation structure comprising, on top of and in contact with said peripheral substrate region, a first region made of a first passivation material and a second region made of a second passivation material, the second region providing, in a surface region of the substrate in contact with said second region, a local increase of the concentration of majority carriers in the substrate.
A vertical power component, comprising:
- a doped silicon substrate of a first conductivity type;
- a local well of the second conductivity type extending from an upper surface of the substrate;
- and
- on the upper surface side of the substrate, a passivation structure coating a peripheral region of the substrate surrounding the well, said passivation structure comprising, on top of and in contact with said peripheral substrate region, a first region made of a first passivation material and a second region made of a second passivation material, the second region providing fixed positive charges at the interface with silicon, to cause, in a surface region of the substrate in contact with said second region, a local increase of the concentration of majority carriers in the substrate.
A method of manufacturing a vertical power component inside and on top of a doped silicon substrate of a first conductivity type, comprising the steps of:
- forming a local well of a second conductivity type extending from an upper surface of the substrate;
- and
- forming, on the upper surface side of the substrate, a passivation structure coating a peripheral region of the substrate surrounding the well, said passivation structure comprising, on top of and in contact with said peripheral substrate region, a first region made of a first passivation material and a second region made of a second passivation material, the second region providing fixed positive charges at the interface with silicon, to cause, in a surface region of the substrate in contact with said second region, a local increase of the concentration of majority carriers in the substrate.
Dependencies are inferred from the claim text.