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US 2017/0287931 A1Published application
Stacked type semiconductor memory device
AssigneeKabushiki Kaisha Toshiba
InventorKotaro NODA
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AssigneeKabushiki Kaisha Toshiba
InventorKotaro NODA
Estimating the term…
According to one embodiment, a semiconductor memory device includes a stacked body which is provided on a substrate and in which an insulating film and an electrode film are alternately stacked. The semiconductor memory device also includes an insulating member which penetrates the stacked body in a stacking direction of the insulating film and the electrode film to thereby separate the stacked body. The semiconductor memory device also includes a semiconductor pillar which penetrates the stacked body in the stacking direction. A maximum portion of the insulating member where a first distance from a side surface of the insulating member to a central plane of the insulating member becomes maximum and a maximum portion of the semiconductor pillar where a second distance from a side surface of the semiconductor pillar to a center line of the semiconductor pillar becomes maximum being provided in different positions in the stacking direction.
A semiconductor memory device comprising:
A semiconductor memory device comprising:
Dependencies are inferred from the claim text.