Semiconductor device

A method for manufacturing a semiconductor device comprising:

• forming a first interlayer insulating film over a semiconductor substrate;
• forming a conductive film on the first interlayer insulating film;
• forming a first isolation insulating film on the conductive film;
• selectively removing the conductive film and the first isolation insulating film to expose a part of the first interlayer insulating film and to form a first wiring covered with the first isolation insulating film and a second wiring covered with the first isolation insulating film;
• forming a second interlayer insulating film on the first interlayer insulating film and the first isolation insulating film;
• etching the first and the second interlayer insulating films by using the first isolation insulating film as a mask to form a trench between the first and the second wirings;
• and
• forming a lower electrode, a capacitor insulating film and an upper electrode in the trench to form a capacitor.