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US 2017/0287701 A1Published application
Epitaxial growth apparatus and method of manufacturing a semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorShinji MIYAZAKI
Life of this patent
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Abstract
According to one embodiment, an epitaxial growth apparatus includes a processing chamber, an exhaust pipe, and an introducing pipe. The exhaust pipe is communicated with the processing chamber. The introducing pipe is communicated with the exhaust pipe and an alkaline gas is introduced into the exhaust pipe via the introducing pipe.
Claims20
An epitaxial growth apparatus, comprising:
- a processing chamber;
- an exhaust pipe communicated with the processing chamber;
- and
- an introducing pipe communicated with the exhaust pipe, an alkaline gas being introduced into the exhaust pipe via the introducing pipe.
1 more element
A method of manufacturing a semiconductor device, comprising:
- placing a substrate in a processing chamber of an epitaxial growth apparatus having an exhaust pipe communicated with the processing chamber;
- and
- introducing an alkaline gas into the exhaust pipe without passing through the processing chamber while forming an epitaxial growth layer on the substrate in the processing chamber.
Dependencies are inferred from the claim text.