US 2017/0285486 A1Published application

Mqw devices & methods for semiconductor patterning systems

AssigneeSamsung Electronics Co., Ltd.

InventorsYibing M. WANG, Duhyun LEE

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Abstract

MQW devices, IC chips and methods may be used in semiconductor lithography patterning systems. An MQW device includes an array of pixels that have transmission elements and associated support circuits. The support circuits have preliminary memory cells and final memory cells. The final memory cells store transmittance values that control transmittances of the associated transmission elements. This way, exposure of a target with a lithography system for purposes of patterning the target may be performed through the transmission elements according to the controlled transmittances, while subsequent transmittance values are being received by the preliminary memory cells from memory banks. The exposure of the target therefore needs to pause for less time, in order to wait for the MQW device to be refreshed with the subsequent transmittance values. Accordingly the whole semiconductor lithography patterning system may operate faster and thus have more throughput.

Claims20

Dependent claims

A method to pattern a target using a multiple-quantum-well (MQW) device configured for use in a semiconductor patterning system, the method comprising:

receiving at a first preliminary memory cell of a first pixel a first transmittance value from a memory bank of the semiconductor patterning system via a data line, the first pixel including a first transmission element and a first support circuit, the first support circuit including the first preliminary memory cell, a first load switch, and a first final memory cell;
receiving the first transmittance value at the first final memory cell from the first preliminary memory cell via the first load switch;
storing the first transmittance value in the first final memory cell;
receiving at a second preliminary memory cell of a second pixel a second transmittance value from the memory bank of the semiconductor patterning system via the data line, the second pixel including a second transmission element and a second support circuit, the second support circuit including the second preliminary memory cell, a second load switch, and a second final memory cell;
receiving the second transmittance value at the second final memory cell from the second preliminary memory cell via the second load switch;
storing the second transmittance value in the second final memory cell;
and
passing a beam of energy through the first and second transmission elements, a first beamlet of energy emerging from the first transmission element towards the target being based on the first stored transmittance value and a second beamlet of energy emerging from the second transmission element towards the target being based on the stored second transmission value.

5 more elements

A method for a MQW device that is configured for use in a semiconductor patterning system that is intended to pattern a target, the MQW device including a first pixel that has a first transmission element and a first support circuit and a second pixel that has a second transmission element and a second support circuit the first support circuit having a first preliminary memory cell, a first load switch, and a first final memory cell, the semiconductor patterning system including a memory bank configured to store a first and a second transmittance values, a data line coupled to the memory bank, and a source configured to transmit a beam of energy towards the MQW device, the method comprising:

receiving, in the first support circuit, the first transmittance value via the data line;
storing the received first transmittance value in the first preliminary memory cell;
receiving, in the first final memory cell, the first transmittance value from the first preliminary memory cell through the first load switch;
storing, in the first final memory cell, the first transmittance value received through the first load switch, a transmittance of the first transmission element depending on the first transmittance value stored in the first final memory cell;
receiving, in the second support circuit, the second transmittance value via the data line;
and
storing, in the second support circuit, the received second transmittance value, a transmittance of the second transmission element depending on the second transmittance value stored in the second support circuit,
in which the first and the second transmission elements permit to emerge, according to their transmittances, beamlets of the transmitted beam that reaches the MQW device, and
the beamlets emerging from the MQW device reach and pattern the target.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 15/628,611Filed 20 Jun 2017
Priority: 8 Dec 2014
Published: 5 Oct 2017
Term ends: Not estimatedThe source records don’t support an estimate.

Classification5 codes

G03F 7/70291
Mask effects on the imaging process: addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid…
G02F 1/0121
For the control of the intensity, phase, polarisation or colour: operation of devices; Circuit arrangements, not otherwise provided for in this…
G02F 1/017
Based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction: structures with periodic or quasi periodic potential…
G03F
Photomechanical production of textured or patterned surfaces

Family

Application62/089,173Us provisional application · filed 8 Dec 2014
Application14/714,245Division · filed 15 May 2015
Application15/628,611Division
US 10,168,622 B2Related patent
US 2016/0161862 A1Published application
US 9,703,208 B2Related patent
US 2017/0285486 A1This patent

From the US filing history. Foreign family members aren’t listed.

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