US 2017/0283982 A1Published application

METHOD FOR PRODUCING P-TYPE SiC SINGLE CRYSTAL

AssigneeNippon Steel & Sumitomo Metal Corporation

InventorsKazuhiko KUSUNOKI, Kazuhito KAMEI, Kazuaki SEKI, Yutaka KISHIDA, Koji MORIGUCHI, Hiroshi KAIDO

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Abstract

A production method according to an embodiment includes a formation step (S1), a first growth step (S2), a recovery step (S3), and a second growth step (S4). In the formation step (S1), a Si—C solution containing Si, Al and C is formed in a crucible. In the first growth step (S2), a seed shaft is moved down to bring a SiC seed crystal attached to the bottom edge of the seed shaft onto contact with the Si—C solution, and thereafter, an Al-doped p-type SiC single crystal is grown on the SiC seed crystal. After the first growth step (S2), the Al concentration in the Si—C solution is increased in the recovery step (S3). After the recovery step (S3), the Al-doped p-type SiC single crystal is further grown in the second growth step (S4).

Claims10

Dependent claims

A method for producing a p-type SiC single crystal by a solution growth technique by use of a production apparatus comprising a crucible and a seed shaft, wherein, the seed shaft including a bottom edge to which a SiC seed crystal is attachable and being movable up and down, the method comprising:

a formation step of forming a Si—C solution in the crucible, wherein the Si—C solution containing Si, Al and C;
a first growth step of moving down the seed shaft to bring the SiC seed crystal attached to the bottom edge of the seed shaft onto contact with the Si—C solution and thereafter growing an Al-doped p-type SiC single crystal on the SiC seed crystal;
a recovery step of increasing an Al concentration in the Si—C solution after the first growth step;
and
a second growth step of further growing the p-type SiC single crystal after the recovery step.

2 more elements

Dependencies are inferred from the claim text.