Magnetoresistive memory device and manufacturing method of the same

A magnetoresistive memory device, comprising:

• a substrate comprising word lines arranged parallel to each other and select transistors using the word lines as gates electrodes;
• bottom contacts provided on the substrate and connected to part of the select transistors, respectively;
• magnetoresistive elements provided on the bottom contacts, respectively;
• top contacts provided on the magnetoresistive elements, respectively;
• an interlayer insulating film provided to cover sides of the magnetoresistive elements, the top contacts and the bottom contacts;
• and
• bit lines provided on the interlayer insulating film, each connecting several of the top contacts, arranged parallel to each other and crossing the word lines when viewed in a direction perpendicular to a surface of the substrate,
• wherein the magnetoresistive elements are classified into groups, and
• the groups are provided in different layers.

A manufacturing method of a magnetoresistive memory device, the method comprising:

• forming a first interlayer insulating film on a substrate comprising first wirings arranged parallel to each other;
• burying first electrodes in the first interlayer insulating film;
• forming a first group of magnetoresistive elements on the first electrodes;
• forming a second interlayer insulating film on the first group of magnetoresistive elements and the first interlayer insulating film;
• burying second electrodes in the first and second interlayer insulating films;
• and
• forming a second group of magnetoresistive elements on the second electrodes.