Back to results
US 2017/0256556 A1Published application
Nonvolatile memory device and method for fabricating the same
AssigneeSK hynix Inc.
InventorNam-Jae LEE
Life of this patent
Estimating the term…
Abstract
A nonvolatile memory device includes cell strings, each including a plurality of memory cells over a substrate, extending in a direction, channel layers, connected with one sides and the other sides of the cell strings, extending in another direction perpendicular to the substrate, select gate electrodes, located over the cell strings, surrounding side surfaces of the channel layers with a gate dielectric layer interposed therebetween, and conductive lines connected with upper ends of the channel layers.
Claims12
1-8. (canceled)
A method for fabricating a nonvolatile memory device, comprising:
- forming a plurality of gate patterns which extend parallel to one another, over a substrate;
- forming channel layers connecting with junction regions of the substrate and extending in a direction perpendicular to the substrate;
- forming select gate electrodes which locate over the gate patterns and surround side surfaces of the channel layers with a gate dielectric layer interposed therebetween;
- and
- forming conductive lines to be connected with upper ends of the channel layers.
2 more elements
19-20. (canceled)
Dependencies are inferred from the claim text.