Back to results
US 2017/0256401 A1Published application
Emissivity, surface finish and porosity control of semiconductor reactor components
AssigneeASM IP Holding B.V.
InventorsCarl Louis White, John Kevin Shugrue
Life of this patent
Estimating the term…
Abstract
An apparatus and methods are provided related to a surface of a reaction chamber assembly component. The surface may be roughened and/or anodized to provide desirable emissivity and porosity to help reduce burn-in time of a reaction chamber and to help reduce particles within the chamber. The apparatus and methods may be suitable for thin film deposition on semiconductor or other substrates.
Claims22
A method comprising the steps of:
- blasting with blast media a surface of an aluminum alloy reaction chamber assembly component to produce a blasted surface having a surface roughness;
- and
- anodizing the blasted surface to form an anodized surface layer.
A method for an aluminum alloy reaction chamber assembly component with an anodized surface layer comprising:
- roughening a surface layer of an aluminum alloy reaction chamber component;
- cleaning the surface layer of the aluminum alloy reaction chamber component;
- anodizing the surface layer of the aluminum alloy reaction chamber component to create an anodized surface layer;
- and
- effecting the installation of the anodized surface layer of the aluminum alloy reaction chamber component into an aluminum alloy reaction chamber configured to fabricate a semiconductor.
2 more elements
Dependencies are inferred from the claim text.