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US 2016/0260846 A1Published application
Unguarded schottky barrier diodes
AssigneeTexas Instruments Incorporated
InventorVladimir Frank Drobny
Life of this patent
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Abstract
One embodiment of the disclosure relates to an unguarded Schottky barrier diode. The diode includes a cathode that has a recessed region and a dielectric interface surface that laterally extends around a perimeter of the recessed region. The diode further includes an anode that conforms to the recessed region. A dielectric layer extends over the dielectric interface surface of the cathode and further extends over a portion of the anode near the perimeter. Other devices and methods are also disclosed.
Claims20
A method, comprising:
- forming a dielectric layer on a cathode layer of a semiconductor substrate;
- defining a window through the dielectric layer to expose the cathode layer;
- defining a recess into the cathode layer through the window, the recess having a perimeter extending under a sidewall of the dielectric layer circumscribing the window;
- forming an isolation layer within the recess, the isolation layer extending to the perimeter of the recess and contacting a bottom surface of the sidewall;
- and
- forming an anode layer on the sidewall and the isolation layer.
3 more elements
An integrated circuit, comprising:
- a diode structure having:
- a dielectric layer including a sidewall defining a window;
- a cathode layer positioned under the dielectric layer, the cathode layer defining a recess exposed by the window and having a perimeter extending under the sidewall of the dielectric layer;
- an isolation layer filling the recess, and extending to the perimeter of the recess under the sidewall of the dielectric layer;
- and
- an anode layer covering the sidewall and the isolation layer.
3 more elements
An integrated circuit, comprising:
- a diode structure having:
- a dielectric layer including a sidewall defining a window;
- an n-doped silicon cathode layer positioned under the dielectric layer, the n-doped silicon cathode layer defining a recess exposed by the window and having a perimeter extending under the sidewall of the dielectric layer;
- a silicide layer filling the recess, and extending to the perimeter of the recess under the sidewall of the dielectric layer;
- and
- a diffusion barrier metal trench covering the sidewall and the silicide layer.
3 more elements
Dependencies are inferred from the claim text.