Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• an underlayer;
• a stacked body provided on the underlayer and including a plurality of electrode layers stacked with insulators between the electrode layers;
• a semiconductor film including a first semiconductor part extending in the stacked body in a stacking direction of the stacked body, a second semiconductor part extending in the stacked body in the stacking direction and a first direction crossing the stacking direction, and a third semiconductor part extending in the underlayer in a second direction connecting the first semiconductor part and the second semiconductor part, the second semiconductor part separating the stacked body in the second direction, the first semiconductor part, the second semiconductor part and the third semiconductor part being made of a same material and being continuous with each other;
• a charge storage film provided between the first semiconductor part and the electrode layers;
• and
• a first metal layer in contact with a side surface of the second semiconductor part.