Semiconductor device
AssigneeElectronics and Telecommunications Research Institute
InventorsChi Hoon JUN, Jeho NA, Dong Yun JUNG, Sang Choon KO, Eun Soo NAM, Hyung Seok LEE
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Abstract
Provided is a semiconductor device. The semiconductor device includes a substrate including a cantilever configured to generate a flow of cooling media through dynamic movement, an active area on the substrate which an electronic device is provided on, an insulation layer disposed to be spaced apart from the active area on the substrate, a lower electrode on the insulation layer, a piezoelectric film on the lower electrode, and an upper electrode on the piezoelectric film.
Claims16
A semiconductor device comprising:
- a substrate comprising a cantilever configured to generate a flow of cooling media through dynamic movement;
- an active area on the substrate which an electronic device is provided on;
- an insulation layer disposed to be spaced apart from the active area on the substrate;
- a lower electrode on the insulation layer;
- a piezoelectric film on the lower electrode;
- and
- an upper electrode on the piezoelectric film.
A semiconductor device comprising:
- a substrate including an active area on which an electronic device is provided;
- and
- a first cooling unit configured to cool the active area through dynamic movement,
- wherein the first cooling unit comprises:
- a cantilever extending from one side of the substrate, the cantilever having a thickness less than that of the substrate;
- a piezoelectric film configured to cause vibration of the cantilever and generate mechanical strain by applied electric energy;
- and
- a pair of counter electrodes with the piezoelectric film therebetween .
Dependencies are inferred from the claim text.