Pattern formation method, control device, and semiconductor device manufacture method

A control device comprising:

• a defect region extraction unit that extracts first positional information indicating a position of a first pattern including a defect in a substrate pattern, the first pattern being formed on a first film on a substrate;
• a position setting unit that sets an accumulation position on which a second film is to be accumulated on the substrate in accordance with the first positional information;
• and
• an instruction output unit that outputs an instruction to accumulate the second film on the accumulation position.

A semiconductor device manufacture method, the method comprising:

• forming a first resist pattern on a first film formed on a first substrate, the first resist pattern including a first pattern in a predetermined region on the first film, the first pattern including a pattern defect;
• accumulating a second film in the predetermined region on the first pattern;
• forming the first film into a second pattern in accordance with the resist pattern and the second film;
• forming a third pattern in the predetermined region on the first film;
• forming a second resist pattern on a third film formed on a second substrate with the first substrate, the first substrate on which the third pattern is formed;
• and
• forming a fourth pattern in the third film with the second resist pattern.