Semiconductor structure with data storage structure and method for manufacturing the same

A semiconductor structure, comprising:

• a substrate;
• a gate structure formed over the substrate;
• a first source/drain structure formed adjacent to a first side of the gate structure in the substrate;
• a second source/drain structure formed adjacent to a second side of the gate structure in the substrate;
• an interlayer dielectric layer formed over the substrate to cover the gate structure, the first source/drain structure, and the second source/drain structure;
• a first conductive structure formed through the interlayer dielectric layer on the first source/drain structure;
• and
• a second conductive structure formed in the interlayer dielectric layer over the second source/drain structure,
• wherein the first conductive structure is in direct contact with the first source/drain structure, and the second conductive structure and the second source/drain structure are separated by a portion of the interlayer dielectric layer.

A method for manufacturing a semiconductor structure, comprising:

• forming a gate structure over a substrate;
• forming a first source/drain structure and a second source/drain structure in the substrate adjacent to the gate structure;
• forming an interlayer dielectric layer over the substrate to cover the gate structure, the first source/drain structure, and the second source/drain structure;
• forming a first trench through the interlayer dielectric layer to expose the first source/drain structure;
• forming a second trench in the interlayer dielectric layer over the second source/drain structure, wherein the second source/drain structure is not exposed by the second trench;
• forming a first conductive structure in the first trench;
• and
• forming a second conductive structure in the second trench.