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US 2016/0237316 A1Published application
Polishing agent, polishing method and method for manufacturing semiconductor integrated circuit device
AssigneeAsahi Glass Company, Limited
InventorsMasaru SUZUKI, Toshihiko OTSUKl
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Abstract
The present invention relates to a polishing agent including: cerium oxide particles; a water-soluble polyamine; potassium hydroxide; at least one selected from an organic acid and a salt thereof; and water, in which the polishing agent has a pH of 10 or more, a polishing method using the polishing agent, and a method for manufacturing a semiconductor integrated circuit device.
Claims10
A polishing agent comprising:
- cerium oxide particles;
- a water-soluble polyamine;
- potassium hydroxide;
- at least one selected from an organic acid and a salt thereof and water,
- wherein the polishing agent has a pH of 10 or more.
2 more elements
Dependencies are inferred from the claim text.