Memory device

A memory device, comprising:

• a plurality of magnetic memory elements arranged on a substrate;
• a mold layer between the magnetic memory elements;
• a protection insulating pattern provided between the magnetic memory elements and the mold layer, the protection insulating pattern exposing top surfaces of the magnetic memory elements;
• and
• an interconnection line in common contact with the top surfaces of the magnetic memory elements,
• the protection insulating pattern including:
• a first protection insulating pattern covering lower side surfaces of the magnetic memory elements;
• and
• a second protection insulating pattern covering upper side surfaces of the magnetic memory elements and including a different material from the first protection insulating pattern.

A memory device, comprising:

• a magnetic memory element on a substrate;
• a first protection insulating layer covering a side surface of the magnetic memory element and including nitrogen;
• and
• a second protection insulating layer on the first protection insulating layer, exposing a top surface of the magnetic memory element, and including a nitrogen-free material;
• and
• an upper mold layer on the second protection insulating layer,
• the second protection insulating layer having a higher etch selectivity with respect to the upper mold layer than that of the first protection insulating layer.