Method of manufacturing semiconductor device and cleaning processing system
AssigneeCanon Kabushiki Kaisha
InventorSatoshi Ogawa
Life of this patent
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Abstract
A method of manufacturing a semiconductor device by performing a plurality of substrate cleaning steps including a process for supplying a chemical solution on a substrate transported into a cleaning apparatus, a process for rotating the substrate, and a process for unloading the substrate from the cleaning apparatus is provided. In the plurality of cleaning steps, a dropping start position of the chemical solution on the substrate is set in a region on the substrate where the semiconductor device has been formed, and the dropping start position is changed at least once.
Claims12
A method of manufacturing a semiconductor device by performing a plurality of substrate cleaning steps including a process for supplying a chemical solution on a substrate transported into a cleaning apparatus, a process for rotating the substrate, and a process for unloading the substrate from the cleaning apparatus,
- wherein in the plurality of cleaning steps, a dropping start position of the chemical solution on the substrate is set in a region on the substrate where the semiconductor device has been formed, and the dropping start position is changed at least once.
A cleaning processing system including:
- a chamber;
- a base which supports and rotates a substrate in said chamber;
- a cleaning portion configured to drop a chemical solution on the substrate on said base and clean the substrate;
- and
- a controller configured to control cleaning by said cleaning portion,
- the cleaning processing system performing a plurality of cleaning steps including a process for supplying the chemical solution onto the substrate transported into said chamber and supported on said base, a process for rotating the substrate, and a process for unloading the substrate from said cleaning portion,
- wherein in the plurality of cleaning steps, said controller controls said cleaning portion such that a dropping start position of the chemical solution on the substrate is set in a region on the substrate where a semiconductor has been formed, and the dropping start position is changed at least once.
Dependencies are inferred from the claim text.