Additives to improve the performance of a precursor source for cobalt deposition
AssigneeIntel Corporation
InventorsJames M. Blackwell, Daniel B. Bergstrom, Scott B. Clendenning, Patricio E. Romero
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Abstract
Methods of forming cobalt films utilizing a cobalt precursor comprising an additive are described. Those methods may include adding an additive to a cobalt precursor, wherein the cobalt precursor is located in an ampoule that is coupled with a deposition tool, and then forming a cobalt film using the cobalt precursor comprising the additive. Non-volatile decomposition products of the cobalt precursor are solubilized in the ampoule.
Claims26
A method of forming a cobalt thin film comprising:
- adding an additive to a cobalt precursor, wherein the cobalt precursor is located in an ampoule of a deposition tool;
- and
- forming a cobalt film using the cobalt precursor comprising the additive, wherein non-volatile decomposition products of the cobalt precursor are solubilized in the ampoule.
A method of depositing a cobalt film in a deposition tool comprising:
- adding an additive to a cobalt precursor, wherein the cobalt precursor is located in an ampoule coupled with the deposition tool;
- and
- forming the cobalt film in a deposition chamber using the precursor comprising the additive, wherein a sludge is not formed in the ampoule.
A method of forming a cobalt film, comprising:
- forming a mixture in an ampoule coupled with a deposition tool, wherein the mixture comprises a cobalt precursor and an additive that solubilizes the non-volatile decomposition products of the cobalt precursor;
- and
- introducing the cobalt precursor into a deposition chamber of a deposition tool, wherein a cobalt film is formed on a microelectronic device.
Dependencies are inferred from the claim text.