Power semiconductor device and method of manufacturing the same

A method of manufacturing a power semiconductor device, the method comprising:

• preparing a first semiconductor region having a first conductivity type;
• forming a trench gate by etching the first semiconductor region, forming a gate insulating layer on a surface thereof, and filling a conductive material therein;
• forming a second semiconductor region by implanting second conductivity type impurities into an upper portion of the first semiconductor region;
• forming a third semiconductor region by implanting first conductivity type impurities into an upper portion of the second semiconductor region;
• and
• forming a fourth semiconductor region by implanting the second conductivity type impurities to be extended from the second semiconductor region to the first semiconductor region.