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US 2015/0144941 A1Published application
Display substrate comprising pixel tft and driving tft and preparation method thereof
AssigneeSamsung Display Co., Ltd.
InventorsMasataka KANO, Sang-Ho PARK, So-Young KOO, Myoung-Hwa KIM, Yeon-Hong KIM, Jung-Hun NOH, Jun-Hyung LIM, Sang-Hee JANG
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Abstract
Disclosed is a display substrate including a driving unit on a substrate comprising a first thin film transistor and a display unit on the substrate being adjacent to the driving unit and comprising a second thin film transistor.
Claims18
A display device comprising:
- a substrate;
- a driving unit on the substrate, the driving unit comprising a first thin film transistor (TFT);
- and
- a display unit on the substrate, the display unit being adjacent to the driving unit and comprising a second TFT,
- wherein the first TFT comprises:
- a first gate electrode on the substrate;
- a first gate insulating layer on the first gate electrode;
- a first semiconductor layer on the first gate insulating layer, overlapping at least a part of the first gate electrode;
- a first insulating layer on at least a part of the first semiconductor layer;
- and
- a first source electrode and a first drain electrode partly on the first semiconductor layer and partly on the first insulating layer, the first source and drain electrodes being spaced apart from each other, and
- the second TFT comprises:
- a second gate electrode on the substrate;
- a second gate insulating layer on the second gate electrode;
- a second semiconductor layer on the second gate insulating layer, overlapping at least a part of the second gate electrode;
- a second source electrode and a second drain electrode on the second semiconductor layer, the second source and drain electrodes being spaced apart from each other;
- and
- a second insulating layer on the second source electrode and the second drain electrode.
15 more elements
A method of manufacturing a display substrate, the method comprising:
- forming a first gate electrode and a second gate electrode on a substrate;
- forming a gate insulating layer on the first gate electrode and the second gate electrode;
- forming a first semiconductor layer and a second semiconductor layer respectively overlapping at least a part of the first gate electrode and a part of the second gate electrode on the gate insulating layer;
- forming a first insulating layer on at least a part of the first semiconductor layer;
- forming a first source electrode and a first drain electrode spaced apart from each other on the first semiconductor layer and the first insulating layer;
- forming a second source electrode and a second drain electrode spaced apart from each other on the second semiconductor layer;
- and
- forming a second insulating layer on the second source electrode and the second drain electrode, having a contact hole configured to expose a part of the second drain electrode.
5 more elements
Dependencies are inferred from the claim text.