US 2015/0104944 A1 · METHOD OF FORMING PATTERNS FOR SEMICONDUCTOR DEVICE

Abstract

There is provided a method of forming patterns for a semiconductor device. The method sequentially forming a first mask layer and a second mask layer on a substrate. The method also includes forming a second mask pattern layer by patterning the second mask layer. The method further includes forming a first mask pattern layer having a negative slope portion, by etching the first mask layer exposed through the second mask pattern layer. The method also includes forming a thin film layer on the substrate exposed through the first mask pattern layer.

Claims20

Dependent claims

A method of forming patterns for a semiconductor device, comprising:

sequentially forming a first mask layer and a second mask layer on a substrate;
forming a second mask pattern layer by patterning the second mask layer;
forming a first mask pattern layer having a negative slope portion, the width of which decreases from an area adjacent to the second mask pattern layer to the substrate, by etching the first mask layer exposed through the second mask pattern layer;
and
forming a thin film layer on the substrate exposed through the first mask pattern layer.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

14/276,502Filed 13 May 2014

Priority

KR 10-2013-012252215 Oct 2013

Published

16 Apr 2015

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10P 76/403
Of masks comprising inorganic materials: for lift-off processes
H10H 20/032
Manufacture or treatment: of electrodes
H10H 20/814
Bodies: having reflecting means, e.g. semiconductor Bragg reflectors
H10P
Generic processes or apparatus for the manufacture or treatment of devices covered

Method of forming patterns for semiconductor device

Life of this patent

Method of forming patterns for semiconductor device

Life of this patent

Abstract

Claims20