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US 2015/0104733 A1Published application
Method for Repairing a Mask
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsun Chuan Shih, Yuan-Chih Chu
Life of this patent
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Abstract
A method for repairing a mask is disclosed. A mask, having at least one defect need to be repaired, is received. The mask includes a transmissive mask or a reflective mask. A location and size of the defect is determined. A repair hard mask (RHM) is formed over the mask. Various configuration of the RHM are disclosed. A repairing process is performed, with the RHM over the mask, to repair the defect.
Claims20
A method for repairing a mask, comprising:
- receiving a mask having a defect;
- determining location and size of the defect;
- forming a repair hard mask (RHM) over the mask;
- forming an opening in the RHM to expose the defect;
- and
- Repairing the defect with the RHM on the mask.
3 more elements
A method for repairing an extreme ultraviolet (EUV) mask, comprising:
- receiving an EUV mask having at least one defect, which is to be repaired;
- determining a location and a size of the defect;
- forming a repair hard mask (RHM) over the EUV mask;
- etching the RHM to form an opening to expose the defect;
- repairing the defect by a gas-assisted focused-electron-beam technique through the opening, with the RHM over the EUV mask;
- and
- stripping the RHM after repairing the defect.
4 more elements
A method for repairing an extreme ultraviolet (EUV) mask, comprising:
- receiving an EUV mask having at least one defect, which is to be repaired;
- determining a location and a size of the defect;
- forming a chromium (Cr) repair hard mask (RHM) over the EUV mask;
- etching the Cr RHM to form an opening to expose the defect;
- repairing the defect by a gas-assisted focused-electron-beam etching technique through the opening, with the Cr RHM over the EUV mask;
- and
- removing the Cr RHM after repairing the defect.
4 more elements
Dependencies are inferred from the claim text.