Wet-process ceria compositions for polishing substrates, and methods related thereto
AssigneeCabot Microelectronics Corporation
InventorBrian REISS
Life of this patent
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Abstract
Disclosed are a chemical-mechanical polishing composition and a method of polishing a substrate. The polishing composition comprises wet-process ceria abrasive particles, (e.g., about 120 nm or less), at least one alcohol amine, at least one surfactant having at least one hydrophilic moiety and at least one hydrophobic moiety, the surfactant having a molecular weight of about 1000, and water, wherein the polishing composition has a pH of about 6. The polishing composition can be used, e.g., to polish any suitable substrate, such as a polysilicon wafer used in the semiconductor industry.
Claims20
A chemical-mechanical polishing composition comprising:
- (a) wet-process ceria abrasive particles having an average particle size of about 120 nm or less;
- (b) at least one alcohol amine;
- (c) at least one surfactant having at least one hydrophilic moiety and at least one hydrophobic moiety, the surfactant having a molecular weight of about 1000 or more;
- and
- (d) water;
- wherein the composition has a pH of about 6 or more.
A method of chemically-mechanically polishing a substrate, which method comprises:
- (i) contacting a substrate with a polishing pad and the polishing composition comprising:
- (a) wet-process ceria abrasive particles having an average particle size of about 120 nm or less;
- (b) at least one alcohol amine;
- (c) at least one surfactant having at least one hydrophilic moiety and at least one hydrophobic moiety, the surfactant having a molecular weight of about 1000 or more;
- and
- (d) water;
- wherein the composition has a pH of about 6 or more;
- and
- (ii) moving the polishing pad and the polishing composition relative to the substrate to abrade at least a portion of the substrate to polish the substrate.
Dependencies are inferred from the claim text.