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US 2015/0084160 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeFujitsu Semiconductor Limited
InventorWensheng WANG
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Abstract
A ferroelectric capacitor formed above a semiconductor substrate includes a lower electrode, a dielectric film (ferroelectric film) having ferroelectric characteristics, and an upper electrode. The upper electrode includes a conductive oxide film made of a ferroelectric material to which conductivity is provided by adding a conductive material such as Ir, and the conductive oxide film is in contact with the dielectric film.
Claims7
A semiconductor device comprising:
- a semiconductor substrate;
- a capacitor formed above the semiconductor substrate, and having a lower electrode, a ferroelectric film, and an upper electrode;
- and
- a conductive oxide film provided between the ferroelectric film and the upper electrode, and having the same structure as a structure of the ferroelectric film, and containing a ferroelectric material provided with conductivity.
1 more element
Dependencies are inferred from the claim text.