US 2015/0084036 A1 · THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF

Abstract

A TFT and a fabricating method thereof are provided. The TFT includes an oxide semiconductor layer, a gate insulating layer, a gate, an oxygen-absorbing layer, an insulating layer, and conductive electrodes. The oxide semiconductor layer includes low-oxygen regions and a channel region between the low-oxygen regions. The gate insulating layer is disposed between the oxide semiconductor layer and the gate, and covers the channel region and exposes the low-oxygen regions. The oxygen-absorbing layer having first openings is disposed on the low-oxygen regions each having a first area exposed by the first opening. The insulating layer having second openings covers the oxygen-absorbing layer, the oxide semiconductor layer, and the gate. The low-oxygen region having a second area is exposed by the second opening within the first opening. The second area is smaller than the first area. The conductive electrodes in the second openings are in contact with the low-oxygen regions.

Claims21

Dependent claims

A thin film transistor disposed on a substrate, the thin film transistor comprising:

an oxide semiconductor layer disposed on the substrate and comprising a channel region and a plurality of low-oxygen regions, wherein the channel region is located between the low-oxygen regions;
a gate insulating layer covering the channel region and exposing the low-oxygen regions;
a gate, wherein the gate insulating layer is located between the oxide semiconductor layer and the gate;
an oxygen-absorbing layer disposed on the low-oxygen regions of the oxide semiconductor layer and comprising a plurality of first openings each exposing a first area of one of the low-oxygen regions;
an insulating layer disposed on the substrate and covering the oxygen-absorbing layer, the oxide semiconductor layer, and the gate, wherein the insulating layer comprises a plurality of second openings each located in one of the first openings to expose a second area of the corresponding one of the low-oxygen regions, and the second area is smaller than the first area;
and
a plurality of conductive electrodes respectively disposed in the second openings to be in contact with the low-oxygen regions having the second areas.

4 more elements

A fabricating method of a thin film transistor, the fabricating method comprising:

forming an oxide semiconductor layer on a substrate, wherein the oxide semiconductor layer comprises a channel region and a plurality of low-oxygen regions, and the channel region is located between the low-oxygen regions;
forming a gate insulating layer on the substrate to cover the channel region of the oxide semiconductor layer;
forming a gate on the substrate, wherein the gate insulating layer is located between the gate and the oxide semiconductor layer;
forming an oxygen-absorbing layer on the substrate to be in contact with the low-oxygen regions of the oxide semiconductor layer;
forming a plurality of first openings in the oxygen-absorbing layer, wherein each of the first openings exposes a first area of one of the low-oxygen regions;
forming an insulating layer on the substrate to cover the oxygen-absorbing layer, the oxide semiconductor layer, and the gate;
forming a plurality of second openings in the insulating layer, wherein each of the second openings is located in one of the first openings to expose a second of the corresponding one of the low-oxygen regions, and the second area is smaller than the first area;
and
forming a plurality of conductive electrodes in the second openings.

6 more elements

Dependencies are inferred from the claim text.

Thin film transistor and fabricating method thereof

Life of this patent

Thin film transistor and fabricating method thereof

Life of this patent

Abstract

Claims21