Semiconductor assembly and method of manufacture

A monolithically integrated semiconductor assembly, comprising:

• a substrate comprising silicon (Si);
• a gallium nitride (GaN) semiconductor device fabricated on the substrate;
• and
• at least one transient voltage suppressor (TVS) structure comprising silicon (Si) fabricated in or on the substrate,
• wherein the TVS structure is in electrical contact with the GaN semiconductor device, and wherein the TVS structure is configured to operate in a punch-through mode when an applied voltage across the GaN semiconductor device is greater than a threshold voltage.

A method of making a monolithically integrated semiconductor assembly comprising:

• (a) providing a substrate comprising silicon (Si);
• (b) fabricating a gallium nitride (GaN) semiconductor device on the substrate;
• (c) fabricating at least one transient voltage suppressor (TVS) in or on the substrate;
• and
• (d) electrically coupling the TVS structure with the GaN semiconductor device,
• wherein the TVS structure is in electrical contact with the GaN semiconductor device, and wherein the TVS structure is configured to operate in a punch-through mode, an avalanche mode, or combinations thereof, when an applied voltage across the GaN semiconductor device is greater than a threshold voltage.