Method for semiconductor self-aligned patterning
AssigneeNanya Technology Corporation
InventorsAN HSIUNG LIU, YA CHIH WANG
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Abstract
A method for semiconductor self-aligned patterning includes steps of providing a substrate comprising a first layer and a second layer, wherein the first layer is on top of the second layer; removing a portion of the first layer to form a first pattern; depositing a first conformal layer on the first pattern; depositing a second conformal layer on the first conformal layer; removing a portion of the second conformal layer to expose a portion of the first conformal layer; and thinning the first conformal layer and the second conformal layer alternatively to form a second pattern. A semiconductor self-aligned structure is also provided.
Claims27
A method for semiconductor self-aligned patterning, comprising:
- providing a substrate comprising a first layer and a second layer, wherein the first layer is on top of the second layer;
- removing a portion of the first layer to form a first pattern;
- depositing a first conformal layer on the first pattern;
- depositing a second conformal layer on the first conformal layer;
- removing a portion of the second conformal layer to expose a portion of the first conformal layer;
- and
- thinning the first conformal layer and the second conformal layer alternatively to form a second pattern.
A semiconductor self-aligned structure, comprising:
- a carrier;
- a first pattern with a first feature size that is positioned on the carrier, wherein the first feature size is a space between adjacent first features;
- and
- a second pattern with a second feature size that is positioned on the carrier, wherein the second feature size is a space between adjacent second features;
- and in which materials composing a first portion of the second pattern are different from materials composing a second portion of the second pattern.
Dependencies are inferred from the claim text.