Fabricating method of semiconductor device

A fabricating method of a semiconductor device comprising:

• forming a lower conductor in a first interlayer dielectric film;
• forming a second interlayer dielectric film on the lower conductor and the first interlayer dielectric film;
• forming a first hard mask pattern having a first opening extending in a first direction on the second interlayer dielectric film, the first hard mask pattern including a metal layer;
• forming a planarization layer on the first hard mask pattern;
• forming a mask layer on the planarization layer;
• forming a second hard mask pattern on the mask layer, the second hard mask pattern including SiN, and having a second opening extending in a second direction different from the first direction;
• forming a mask pattern by patterning the mask layer using the second hard mask pattern;
• removing the second hard mask pattern using a wet process;
• and
• forming trenches and via holes in the second interlayer dielectric film using the mask pattern and the first hard mask pattern.

A fabricating method of a semiconductor device comprising:

• forming a lower conductor in a first interlayer dielectric film;
• forming a second interlayer dielectric film on the lower conductor and the first interlayer dielectric film;
• forming a first hard mask pattern on the second interlayer dielectric film, the first mask pattern having a first opening extending in a first direction;
• forming a planarization layer on the first hard mask pattern;
• forming a mask pattern on the planarization layer, the mask pattern having a second opening extending in a second direction perpendicular to the first direction, wherein the lower conductor is positioned under a region where the first opening and the second opening overlap;
• and
• forming a via hole and a trench connected to the via hole using the first hard mask pattern and the mask pattern, wherein the via hole exposes an upper surface of the lower conductor,
• wherein the mask pattern is formed using a second hard mask pattern including SiN.