Method of Conducting a Direction-Specific Trimming Process for Contact Patterning
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing Chyi Liu, Shih-Chang Liu, Chia-Shiung Tsai
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Abstract
The present disclosure discloses a method of fabricating a semiconductor device. A first layer is formed over a substrate. A patterned second layer is then formed over the first layer. The patterned second layer includes an opening. A spacer material is then deposited in the opening, thereby reducing the opening in a plurality of directions. A direction-specific trimming process is performed to the spacer material and the second layer. Thereafter, the first layer is patterned with the second layer.
Claims20
A method of fabricating a semiconductor device, comprising:
- forming a first layer over a substrate;
- forming a patterned second layer over the first layer, the patterned second layer including an opening;
- depositing a spacer material in the opening, thereby reducing the opening in a plurality of directions;
- performing a direction-specific trimming process to the spacer material and the second layer;
- and
- thereafter patterning the first layer with the second layer.
A method of fabricating a semiconductor device, comprising:
- forming a first layer over a substrate;
- forming a patterned second layer over the first layer, the patterned second layer including an opening;
- etching the second layer in a manner such that edges of the second layer defining the opening have a tapered profile;
- performing a direction-specific trimming process to the second layer;
- and
- thereafter patterning the first layer with the second layer.
A method of fabricating a semiconductor device, comprising:
- forming a first layer over a substrate;
- forming a second layer over the first layer;
- forming a patterned third layer over the second layer, the third layer including an opening;
- depositing a spacer material in the opening, thereby reducing the opening in a plurality of directions;
- performing a direction-specific trimming process to the spacer material;
- thereafter patterning the second layer with the third layer;
- and
- patterning the first layer with the second layer.
Dependencies are inferred from the claim text.