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AssigneeRicoh Company, Ltd.
InventorsJUNICHI WADA, MASAHIRO HAYASHI, SHINSUKE MIYAKE, NAOYA MIYOSHI, SEIJI SARAYAMA
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A group 13 nitride crystal of hexagonal crystal including at least one or more metal atom selected from the group consisting of B, Al, Ga, In, and Tl, and a nitrogen atom, the group 13 nitride crystal comprises: a first region provided on the inner side of a cross section crossing a c-axis; a third region provided on an outermost side of the cross section; a second region provided between the first region and the third region at the cross section and having characteristics different from characteristics of the first region and the third region, wherein a shape formed by a boundary between the first region and the second region at the cross section is non-hexagonal.
A group 13 nitride crystal of hexagonal crystal comprising at least one or more metal atom selected from the group consisting of B, Al, Ga, In, and Tl, and a nitrogen atom, the group 13 nitride crystal comprising:
A method for production of a group 13 nitride crystal, the method comprising a crystal growth step of crystal-growing a nitride crystal on a seed crystal whose cross-section shape crossing a c-axis is non-hexagonal.
Dependencies are inferred from the claim text.