Method of manufacturing semiconductor device and method of cleaning processing vessel
AssigneesHitachi Kokusai Electric Inc., L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
InventorsKenji KAMEDA, Jun SONOBE, Yudai TADAKI
Life of this patent
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Abstract
When a dry cleaning process is performed in a processing chamber by adding nitrogen monoxide (NO) gas to a cleaning gas, the handling is facilitated, and cleaning performance is improved. A substrate processing apparatus includes a processing vessel configured to process a substrate, a first cleaning gas supply system configured to pre-mix a gas containing fluorine atoms with the NO gas and supply the pre-mixed gas into the processing vessel, and a second cleaning gas supply system installed apart from the first cleaning gas supply system and configured to supply the fluorine-containing gas into the processing vessel.
Claims10
A method of manufacturing a semiconductor device, comprising:
- (a) supplying a processing gas into a processing vessel accommodating a substrate to form a thin film on the substrate;
- (b) supplying a fluorine-containing gas and a nitrogen monoxide gas into a first cleaning gas supply system and mixing the fluorine-containing gas with the nitrogen monoxide gas in the first cleaning gas supply system to generate an FNO gas;
- and
- (c) supplying the FNO gas into the processing vessel through the first cleaning gas supply system while simultaneously supplying the fluorine-containing gas into the processing vessel through a second cleaning gas supply system installed apart from the first cleaning gas supply system so as to remove a deposit containing the thin film adhered to an inside of the processing vessel.
A method of cleaning an inside of a processing vessel comprising:
- (a) providing the processing vessel configured to process a substrate to form a thin film thereon;
- and
- (b) supplying a fluorine-containing gas and a nitrogen monoxide gas into a first cleaning gas supply system and mixing the fluorine-containing gas with the nitrogen monoxide gas in the first cleaning gas supply system to generating an FNO gas;
- and
- (c) supplying the FNO gas into the processing vessel through the first cleaning gas supply system while simultaneously supplying the fluorine-containing gas into the processing vessel through a second cleaning gas supply system installed apart from the first cleaning gas supply system so as to remove a deposit containing the thin film adhered to an inside of the processing vessel.
Dependencies are inferred from the claim text.