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US 2014/0231958 A1Published application
Capacitors having dielectric layers with different band gaps and semiconductor devices using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHan-Jin Lim, Seok-Woo Nam, Jung-Hwan Oh, Ki-Vin Im
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Abstract
A capacitor of a memory device includes dielectric layers with different energy band gaps. The capacitor may include, for example, a first electrode and a first dielectric layer on the first electrode. The capacitor may further include a second dielectric layer on the first dielectric layer. The first and second dielectric layers may include the same dielectric material with different concentration of an impurity therein. A second electrode is disposed on the second dielectric layer.
Claims20
A capacitor comprising:
- a first electrode;
- a first dielectric layer on the first electrode;
- a second dielectric layer on the first dielectric layer, wherein the first and second dielectric layers comprise the same dielectric material with different concentration of an impurity therein;
- and
- a second electrode formed on the second dielectric layer.
2 more elements
A capacitor comprising:
- a first electrode;
- a first dielectric layer on the first electrode and comprising a first impurity;
- a second dielectric layer on the first dielectric layer and comprising a second impurity different from the first impurity;
- and
- a second electrode formed on the second dielectric layer.
2 more elements
A memory device comprising:
- a substrate;
- and
- a plurality of memory cells on the substrate, each of the memory cells comprising a data storage capacitor comprising multiple dielectric layers with different energy band gaps.
Dependencies are inferred from the claim text.