Fin field effect transistor fabricated with hollow replacement channel
AssigneeApplied Materials, Inc.
InventorsChorng-Ping Chang, Bingxi Wood
Life of this patent
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Abstract
A method for forming a FinFET comprises forming a raised fin between isolation trenches on a substrate. A plurality of sacrificial features is formed on at least a portion of the raised fin, the sacrificial features including a sacrificial gate dielectric and a sacrificial gate electrode having sidewalls. The sacrificial features on the raised fin are removed to form a hollow channel. Channel material is selectively and epitaxially grown in the hollow channel to form a channel.
Claims21
A method for forming a finFET, the method comprising:
- (a) forming a raised fin between isolation trenches on a substrate;
- (b) forming a plurality of sacrificial features on at least a portion of the raised fin, the sacrificial features including a sacrificial gate dielectric and a sacrificial gate electrode having sidewalls;
- (c) removing one or more of the sacrificial features on the raised fin to form a hollow channel;
- and
- (d) epitaxially growing channel material in the hollow channel to form a channel.
A method for forming a FinFET, the method comprising:
- (a) forming a raised fin composed of silicon between shallow isolation trenches on a substrate;
- (b) forming a plurality of sacrificial features on at least a portion of the raised fin, the sacrificial features including an underlying sacrificial gate dielectric, an overlying sacrificial gate electrode having sidewalls, and a sacrificial dielectric cap formed over the sacrificial gate electrode;
- (c) forming sidewall spacers on the sidewalls of the sacrificial gate electrode;
- (d) forming a source and drain on another portion of the silicon raised fin;
- (e) removing one or more of the sacrificial features on the raised fin to form a hollow channel;
- and
- (f) epitaxially growing channel material in the hollow channel to form a channel.
18-20. (canceled)
A method for forming a FinFET, the method comprising:
- (a) forming a raised fin composed of silicon semiconducting material between shallow isolation trenches on a substrate;
- (b) forming a plurality of sacrificial features on at least a portion of the raised fin, the sacrificial features including an underlying sacrificial gate dielectric, an overlying sacrificial gate electrode having sidewalls, and a sacrificial dielectric cap formed over the sacrificial gate electrode;
- (c) forming sidewall spacers on the sidewalls of the sacrificial gate electrode;
- (d) forming a source and drain on another portion of the raised fin;
- (e) removing one or more of the sacrificial features on the raised fin to form a hollow channel;
- and
- (f) epitaxially growing channel material in the hollow channel to form a channel, the channel material being a semiconducting material that is a different material than the silicon semiconducting material.
Dependencies are inferred from the claim text.