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US 2014/0197882 A1Published application
Switching device with resistive divider
AssigneeTriQuint Semiconductor, Inc.
InventorsRavishankar Prabhakar, III, James P. Furino, JR.
Life of this patent
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Abstract
Embodiments provide a switching device including one or more field-effect transistors (FETs). In embodiments, a resistive divider comprising a first resistor and a second resistor may be coupled with the FET at a position electrically between a gate terminal of the FET and a body terminal of the FET.
Claims27
A circuit comprising:
- a metal-oxide-semiconductor field-effect transistor (MOSFET) including a source terminal, a gate terminal, a drain terminal, and a body terminal;
- a resistive divider having a first resistor and a second resistor and coupled with and between the gate terminal and the body terminal;
- and
- a DC voltage source coupled with the gate terminal and the resistive divider, the DC voltage source configured to provide a constant DC voltage to the gate terminal and the resistive divider.
1 more element
A circuit comprising:
- a DC power source configured to provide a constant DC voltage;
- a ground source configured to provide a ground voltage;
- and
- one or more unit cells coupled with the DC power source and the ground source, a unit cell of the one or more unit cells including:
- a metal-oxide-semiconductor field-effect transistor (MOSFET) having a body terminal, a gate terminal coupled with the DC power source such that the DC power source is configured to provide the DC voltage to the gate terminal, a source terminal, and a drain terminal;
- and
- a resistive divider coupled with the DC power source such that the DC power source is configured to provide the DC voltage to the resistive divider, the resistive divider comprising a first resistor and a second resistor and configured to bias a voltage of the body terminal between the DC voltage and the ground voltage when the DC voltage is not equal to the ground voltage.
4 more elements
A method comprising:
- coupling a metal-oxide-semiconductor field-effect transistor (MOSFET) with a DC power source and a ground source, the MOSFET comprising a drain terminal, a body terminal, a source terminal, and a gate terminal;
- and
- coupling the body terminal and the gate terminal of the MOSFET with the resistive divider such that the resistive divider is positioned between the body terminal and the gate terminal;
- wherein the resistance of the first resistor and the resistance of the second resistor are based at least in part on a desired voltage of the body terminal when the gate terminal is at a constant DC gate voltage provided by the DC power source, wherein the DC gate voltage is not equal to a ground voltage of the ground source.
1 more element
Dependencies are inferred from the claim text.